A new I–V model for light-emitting devices with a quantum well-Reference-Cited by-同舟云学术

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A new I–V model for light-emitting devices with a quantum well

Published:2006-11 Issue:11 Volume:37 Page:1335-1338
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Lee Chin C.,Chen Winnie V.,Park Jeong

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

1. Semiconductor Lasers and Heterojunction LEDs;Kressel,1977

2. Optoelectronics and Photonics;Kasap,2001

3. Physics of Semiconductor Devices;Sze,1981

4. Semiconductor Device Fundamentals;Pierret,1996

5. The theory of p–n junctions in semiconductors and p–n junction transistors;Shockley;Bell Syst. Tech. J.,1949

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3. Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method;International Journal of Photoenergy;2016

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