Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency-Reference-Cited by-同舟云学术

Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency

Published:2008-12 Issue:12 Volume:39 Page:1416-1424
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kumar Sona P.,Agrawal Anju,Chaujar Rishu,Gupta Mridula,Gupta R.S.

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

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4. Application of GaN-based heterojunction FETs for advanced wireless communication;Ohno;IEEE Trans. Electron Devices,2001

5. GaN processing, defects and devices;Pearson;J. Appl. Phys.,1998

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3. Intense laser field effects on the linear and nonlinear intersubband optical properties in a strained InGaN/GaN quantum well;Physica B: Condensed Matter;2014-11

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