An enhanced model for InGaP/GaAs heterojunction bipolar transistor

Author:

Shi Yuxia,Wang Yan

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

1. Broadband HBT Doherty power amplifiers for handset applications;Kang;IEEE Trans. Microwave Theory and Technol.,2010

2. R. Kozhuharov, D. Kuylestierna, H. Zirath, 24GHz InGaP–GaAs HBT push–push VCO with broadband tuning range, in: Proceedings of 2009 EuMIC, pp. 242–245.

3. Brian Moser, W. Wohlmuth, S. Nedeljkovic, W. Clausen, D. Halchin, R. Vass, M. Fresina, An InGaP/GaAs HBT/JFET BiFET technology for PA bias circuit applications, in: Proceedings of 2008 CS MANTECH Conference, April 14–17, Chicago, Illinois, USA.

4. 〈http://hbt.ucsd.edu/〉, UCSD HBT model, 2000, Rev 9.001a.

5. Agilent Technologies, A nonlinear circuit simulation model for GaAs and InP heterojunction bipolar transistors. Microwave J., December 2003, 126–134.

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Surface potential in n- and p-GaInP2(100): temperature effect;Journal of Physics D: Applied Physics;2021-02-18

2. Semiconductor Heterojunctions ☆;Reference Module in Materials Science and Materials Engineering;2018

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