A low power and high gain CMOS LNA for UWB applications in 90nm CMOS process
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference17 articles.
1. Wideband and multiband CMOS LNAs: state-of-the-art and future prospects;Rastegar;Microelectron. J.,2012
2. A low power and high linearity UWB low noise amplifier (LNA) for 3.1–10.6GHz wireless applications in 0.13μm CMOS process;Rastegar;Microelectron. J.,2013
3. A novel configuration for UWB LNA suitable for low-power and low-voltage applications;Nakhlestani;Microelectron. J.,2012
4. Design of low power CMOS ultra wide band low noise amplifier using noise canceling technique;Shim;Microelectron. J.,2013
5. A 0.9V, 7mW UWB LNA for 3.1–10.6GHz wireless applications in 0.18μm CMOS technology;Slimane;Microelectron. J.,2011
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1. Design of a low power LNA circuit with noise canceling approach in 90 nm CMOS process;Integration;2024-05
2. Design of Common Gate Current-Reuse Noise Cancellation UWB Low Noise Amplifier in 90nm CMOS;International Journal of Electronics, Communications, and Measurement Engineering;2022-10-26
3. A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications;Electrica;2022-06-06
4. A common-gate cascaded with cascoded self-bias common source approach for 3.1–10.6 GHz UWB low noise amplifier;International Journal of Information Technology;2022-05-28
5. Design of high gain high output matched narrow band LNA using induced degeneration topology for receiver applications;Telecommunication Systems;2022-02-02
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