A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception-Reference-Cited by-同舟云学术

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A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception

Published:2005-01 Issue:1 Volume:36 Page:67-75
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Avci Uygar,Tiwari Sandip

Publisher

Elsevier BV

Subject

General Engineering

Reference11 articles.

1. Back-gated MOSFETs with controlled silicon thickness for adaptive threshold-voltage control;Avci;Electron. Lett.,2004

2. CMOS and memories: from 100nm to 10nm;Tiwari;Microelectron. Eng.,1999

3. Triple-self-aligned, planar double-gate MOSFETs: devices and circuits;Guarini;IEDM Tech. Dig.,2001

4. Straddle-gate transistor: changing MOSFET channel length between off- and on-state towards achieving tunneling-defined limit of field-effect;Tiwari;IEDM Tech. Dig.,1998

5. A high density high performance 180nm generation Etox flash memory technology;Fazio;IEDM Tech. Dig.,1999

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bus Energy Consumption for Multilevel Signals;IEEE Transactions on Circuits and Systems I: Regular Papers;2010-01

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