Effect of dimensional parameters on the current of MSM photodetector
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference8 articles.
1. 11GHz bandwidth optical integrated recievers using GaAs MESFET and MSM technology;Wang;IEEE Photonics Technol. Lett.,1993
2. 105GHz bandwidth metal–semiconductor–metal photodiode;Van Zeghbroeck;IEEE Electron Device Lett.,1988
3. Integrated optical receivers using MSM detectors;Rogers;IEEE J. Lightwave Technol.,1991
4. GaAs optoelectronics integrated circuits for high speed optical communications;Rogers;Microelectron. Eng.,1991
5. Monolithically integrated InGaAs/InP MSM–FET photoreceiver prepared by chemical beam epitaxy;Yang;IEEE photonics Technol. Lett.,1990
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