Self-aligned In0.49Ga0.51P/GaAs HBT DC and RF characteristics related with orientations
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference8 articles.
1. Very-high-speed InP/InGaAs HBT IC's for optical transmission system;Suzuki;IEEE Journal of Solid-State Circuits,1998
2. The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling;Liu;IEEE Transaction on Electron Devices,1994
3. SiGe HBT model converting technique from SGP to VBIC model;Liu;Microelectronics Journal,2002
4. Orientation effect on planar GaAs Schottky barrier field transistor;Lee;Applied Physics Letters,1980
5. Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristics;Asbeck;IEEE Transaction on Electron Devices,1984
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1. Guide to the Literature of Piezoelectricity and Pyroelectricity. 26;Ferroelectrics;2006-04
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