A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices

Author:

Yang Jianguo,Lin Ruijun,Zhou Keji,Zhang Yuejun,Xue Xiaoyong,Lv Hangbing

Publisher

Elsevier BV

Subject

General Engineering

Reference33 articles.

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5. Methods for estimating the convergence of inter-chip min-entropy of SRAM PUFs;Liu;IEEE Trans. Circuits Syst. I-Regul. Pap.,2018

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1. Spinel ferrites for resistive random access memory applications;Emergent Materials;2023-11-22

2. Dynamic self-test scheme and authentication protocol for improving robustness of strong PUF;Microelectronics Journal;2023-09

3. Resistive RAM-based PUF: Challenges and Opportunities;2023 IEEE 16th Dallas Circuits and Systems Conference (DCAS);2023-04-14

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