QLC NAND study and enhanced Gray coding methods for sixteen-level-based program algorithms-Reference-Cited by-同舟云学术

QLC NAND study and enhanced Gray coding methods for sixteen-level-based program algorithms

Published:2017-08 Issue: Volume:66 Page:58-66
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Liu Shijun,Zou Xuecheng

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

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2. Jung-Dal Choi, Joon-Hee Lee, Won-Hong Lee, et al, A 0.15 pm NAND flash technology with 0.11 pm2 cell size for 1 Gbit flash memory, in: Proceedings of International Electron Devices Meeting, pp. 33.2.1-33.2.4, 2000.

3. Krishna Parat, Chuck Dennison, AFloatingGate Based, 3D NAND Technology with CMOS under Array, in: Proceedings of Conference on International Electron Devices Meeting, pp. 3.3.1-3.3.4, 2015.

4. Fujio Masuoka, Technology trend of flash-EEPROM – can flash-EEPROM overcome DRAM, in: Proceedings of the Symposium on VLSl Technology Digest of Technical, 1992, pp. 6-9.

5. Architecture for high-speed programming multilevel NAND flash memories;Takeuchi;IEEE J. Solid-State Circuits,1998

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