Accurate charge transport model for nanoionic memristive devices-Reference-Cited by-同舟云学术

Accurate charge transport model for nanoionic memristive devices

Published:2017-07 Issue: Volume:65 Page:49-57
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Amirsoleimani Amirali,Shamsi Jafar,Ahmadi Majid,Ahmadi Arash,Alirezaee Shahpour,Mohammadi Karim,Karami Mohammad Azim,Yakopcic Chris,Kavehei Omid,Al-Sarawi Said

Publisher

Elsevier BV

Subject

General Engineering

Reference36 articles.

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4. O. Kavehei, K. Cho, S. Lee, S.J. Kim, S. Al-Sarawi, D. Abbott, K. Eshraghian, Fabrication and modeling of Ag/TiO2/ITO memristor, in: Proceedings of the 54th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS, 2011, pp. 1–4. http://dx.doi.org/10.1109/MWSCAS.2011.6026575.

5. The elusive memristor: properties of basic electrical circuits;Joglekar;Eur. J. Phys.,2009

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