A −184 dB PSRR and 2.47 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si7.svg" display="inline" id="d1e1112"><mml:mrow><mml:mi>μ</mml:mi><mml:msub><mml:mrow><mml:mi>V</mml:mi></mml:mrow><mml:mrow><mml:mi>r</mml:mi><mml:mi>m</mml:mi><mml:mi>s</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math> noise self biased bandgap reference based on FVF structure-Reference-Cited by-同舟云学术

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A −184 dB PSRR and 2.47 μVrms noise self biased bandgap reference based on FVF structure

Published:2024-10 Issue: Volume:152 Page:106388
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Xie Jin,Wu Chunkai,Wu Junyuan,Li Jinghu^ORCID,Luo Zhicong^ORCID,Sun Qiyan

Publisher

Elsevier BV

Reference36 articles.

1. A 6 ppm/°C capacitively-biased diode based novel bandgap circuit with driving capability and calibration;Hu;Microelectron. J.,2024

2. A 1-V 2.69-ppm/°C 0.8-μW bandgap reference with piecewise exponential curvature compensation;Luo;Microelectron. J.,2022

3. A 3.0 μ Vrms, 2.4 ppm/°C BGR with feedback coefficient enhancement and bowl-shaped curvature compensation;Liao;IEEE Trans. Circuits Syst. I. Regul. Pap.,2024

4. A 1.2-V 0.959-ppm/°C multi-section curvature-compensated bandgap voltage reference with trimming;Chen;Microelectron. J.,2023

5. A high PSR and high-precision current-mode bandgap reference with gm boost self-regulated structure;Zhi-Zhi Chen;Microelectron. J.,2023

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