Design of InAs/Ga(In)Sb superlattices for infrared sensing
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference6 articles.
1. High quality type-II InAs/GaSb superlattices with cut-off wavelength ∼3.7μm using interface engineering;Wei;Journal of Applied Physics,2003
2. Optoelectronic properties of photodiodes for the mid- and far-infrared based on the InAs/GaSb/AlSb materials family;Fuchs;SPIE Proceedings on Photodetectors: Materials and Devices VI,2001
3. High-performance InAs/GaSb superlattice photodiodes for the very long wavelength range;Mohseni;Applied Physics Letters,2001
4. Optimization of mid-infrared InAs/GaSb type-II superlattices;Haugan;Applied Physics Letters,2004
5. Effects of interfaces and the spin-orbit band on the band gaps of InAs/GaSb superlattices beyond the standard envelope-function approximation;Szmulowicz;Physical Review B,2004
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