Optimization of sub-0.1-μm offset Γ-shaped gate MHEMTs for millimeter-wave applications-Reference-Cited by-同舟云学术

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Optimization of sub-0.1-μm offset Γ-shaped gate MHEMTs for millimeter-wave applications

Published:2004-12 Issue:12 Volume:35 Page:973-983
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Han Min,Son Myung-Sik,Oh Jung-Hun,Lee Bok-Hyung,Kim Mi-Ra,Kim Sam-Dong,Rhee Jin-Koo

Publisher

Elsevier BV

Subject

General Engineering

Reference19 articles.

1. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

2. 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/

3. A. Endoh, Y. Yamashita, M. Higashiwaki, K. Hikosaka, M. Mimura, S. Hiyamizu, T. Maysui, Proceedings of 12th International Conference on InP and Related Materials, Williamsburg, USA, 2000, p. 87.

4. W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system;Solid-State Electronics;2015-12

2. Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications;IEEE Transactions on Electron Devices;2010-10

3. Interrelation between Strain Relaxation and In_xAl_1-xAs Compositional Graded Step Buffer Layers on GaAs Substrate Grown by Molecular Beam Epitaxy;Solid State Phenomena;2007-06

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