Visible blind p+–π–n−–n+ ultraviolet photodetectors based on 4H–SiC homoepilayers-Reference-Cited by-同舟云学术

Visible blind p+–π–n−–n+ ultraviolet photodetectors based on 4H–SiC homoepilayers

Published:2006-11 Issue:11 Volume:37 Page:1396-1398
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Liu X.F.,Sun G.S.,Li J.M.,Ning J.,Luo M.C.,Wang L.,Zhao W.S.,Zeng Y.P.

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

1. Demonstration of 4H–SiC visible-blind EUV and UV detector with large detection area;Xin;Electron. Lett.,2005

2. III-nitride UV devices;Asif Khan;Jpn. J. Appl. Phys.,2005

3. Photovoltaic Schottky ultraviolet detectors fabricated on boron-doped homoepitaxial diamond layer;Liao;Appl. Phys. Lett.,2006

4. SiC materials-progress, status, and potential roadblocks;Powell;Proc. IEEE,2002

5. Study of reverse dark current in 4H–SiC avalanche photodiodes;Guo;IEEE Journal of Quantum Electronics,2005

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