Author:
Zhou J.,Ren X.M.,Wang Q.,Xiong D.P.,Huang H.,Huang Y.Q.
Reference15 articles.
1. GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth;Berger;Appl. Phys. Lett.,1991
2. Facet formation and characterization of III–V structures grown on patterned surfaces;Heinecke;Microelectron. J.,1997
3. Butt-coupling loss of 0.1dB/interface in InP/InGaAs multiple quantum-well waveguide–waveguide structures grown by selective area chemical beam epitaxy;Verschuren;Semicond. Sci. Technol.,1998
4. Development of metal-organic vapor phase enhanced selective area epitaxy, a novel metal-organic vapor phase epitaxy selective area growth technique, and its application to muti-mode interference device fabrication;Bouda;Jpn. J. Appl. Phys.,1999
5. Y.T. Sun, K. Baskar, J. Berggren, S. Lourdudoss, InGaAsP muti-quantum wells at 1.5μm wavelength grown on indium phosphide templates on silicon. in: 15th International Conference on Indium Phosphide and Related Materials, IEEE, Santa Barabara, CA, USA 277 2003.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献