A comparative study on the accuracy of small-signal equivalent circuit modeling for large gate periphery GaN HEMT with different source to drain length and gate width-Reference-Cited by-同舟云学术

A comparative study on the accuracy of small-signal equivalent circuit modeling for large gate periphery GaN HEMT with different source to drain length and gate width

Published:2021-12 Issue: Volume:118 Page:105258
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Anand Anupama,Reeta ,Rawal Dipendra Singh,Narang Rakhi,Mishra Meena,Saxena Manoj,Gupta Mridula

Publisher

Elsevier BV

Subject

General Engineering

Reference29 articles.

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3. Very high frequency small-signal equivalent circuit for short gate-length InP HEMTs;Miras;IEEE Trans. Microw. Theor. Tech.,1997

4. A new extraction method of extrinsic elements of GaAs/GaN HEMTs;Huang,2014

5. A new small-signal parameter extraction technique for large gate-periphery GaN HEMTs;Ahsan;IEEE Microw. Wireless Compon. Lett.,2017

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