Quasi-static capacitance–voltage characteristics of pentacene-based metal–oxide–semiconductor structures-Reference-Cited by-同舟云学术

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Quasi-static capacitance–voltage characteristics of pentacene-based metal–oxide–semiconductor structures

Published:2013-07 Issue:7 Volume:44 Page:606-611
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Ucurum C.,Goebel H.

Publisher

Elsevier BV

Subject

General Engineering

Reference23 articles.

1. MOS Physics and Technology;Nicollian,2003

2. Physics of Semiconductor Devices;Sze,2007

3. Organic field-effect transistors;Horowitz;Adv. Mater.,1998

4. Organic thin film transistors for large area electronics;Dimitrakopoulos;Adv. Mater.,2002

5. Organic thin-film transistors;Klauk;Chem. Soc. Rev.,2010

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1. Analysis on the capacitance-voltage characteristics of metal-insulator-semiconductor capacitors based on thermally evaporated WOx on n- and p- type crystalline silicon;Materials Science and Engineering: B;2024-06

2. Quantization Effect in N-Channel Inversion Mode Si, In0.53Ga0.47As and Ge Based Double Gate MOSFET Using Quasi-Static Capacitance–Voltage Characteristics for Upcoming Sub 10 nm Technology Node;Silicon;2024-03-01

3. Evaluation of organic metal-oxide-semiconductor capacitors based on a distributed constant circuit;Japanese Journal of Applied Physics;2020-02-27

4. Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9–300 K;Thin Solid Films;2019-12

5. Design-Technology Interaction;Springer Theses;2017-12-30

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