Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference15 articles.
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2. Fabrication of Schottky barrier MOSFETs on SOI by a self-assembly CoSi2-patterning method;Zhao;Solid-State Electron.,2003
3. Schottky-barrier source/drain MOSFETs on ultrathin SOI body with a tungsten metallic midgap gate;Larrieu;IEEE Electron. Device Lett.,2004
4. Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode;Zhu;IEEE Electron. Device Lett.,2004
5. Germanium pMOSFETs With Schottky-Barrier Germanide S/D, High-k Gate Dielectric and Metal Gate;Zhu;IEEE Electron. Device Lett.,2005
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1. Schottky Tunneling Effects in a Tunnel FET;IEEE Transactions on Electron Devices;2017-12
2. Schottky barrier nano-MOSFET with an asymmetrically oxidized source/drain structure;Solid-State Electronics;2010-01
3. A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs;Semiconductor Science and Technology;2006-03-21
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