On the improved RF performance of step field plate LDMOS transistor-Reference-Cited by-同舟云学术

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On the improved RF performance of step field plate LDMOS transistor

Published:2024-06 Issue: Volume:148 Page:106210
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Patel Rutu^ORCID,Mohapatra Nihar R.^ORCID

Funder

Indian Space Research Organisation

Publisher

Elsevier BV

Reference21 articles.

1. LDMOS technology for power amplifiers up to 12 GHz;Theeuwen,2018

2. LDMOS technology for RF power amplifiers;Theeuwen;IEEE Trans. Microw. Theory Tech.,2012

3. 0.18 μM BCD technology platform with best-in-class 6 v to 70 v power MOSFETs;Chou,2012

4. Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit;van Rijs,2006

5. A complementary RF-LDMOS architecture compatible with 0.13 μm CMOS technology;Mohapatra,2006

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