Thermal characteristics analysis of Ga2O3 and GaN devices on different substrates-Reference-Cited by-同舟云学术

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Thermal characteristics analysis of Ga2O3 and GaN devices on different substrates

Published:2024-08 Issue: Volume:150 Page:106266
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Liu Chunyan,Li Yao^ORCID,Wang Cailin

Publisher

Elsevier BV

Reference25 articles.

1. Thermal spreading resistance in ballistic-diffusive regime for GaN HEMTs;Hua;Trans. Electron Dev.,2019

2. Self-heating in GaN transistors designed for high-power operation;Kuzmík;Trans. Electron Dev.,2014

3. Thermal effect of epilayer on phonon transport of semiconducting heterostructure interfaces;Huang;Int. J. Heat Mass Tran.,2021

4. Investigation of the interface electronic characteristics of β-Ga2O3 (100)/4H-SiC (0001);Xu;J. Cryst. Growth,2023

5. Toward emerging gallium oxide semiconductors: a roadmap;Yuan;Fundam. Res.,2021

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