A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor
Author:
Funder
National Natural Science Foundation of China
Basic and Applied Basic Research Foundation of Guangdong Province
Publisher
Elsevier BV
Reference16 articles.
1. Area-Efficient fast-speed lateral IGBT with a 3-D n-region-controlled anode;Chen;IEEE Electron. Device Lett.,2010
2. Novel snapback-free reverse-conducting SOI-LIGBT with dual embedded diodes;Zhang;IEEE Trans. Electron. Dev.,2017
3. A novel low turn-off loss and snapback-free reverse-conducting SOI-LIGBT with integrated polysilicon diodes;Hu;IEEE Trans. Electron. Dev.,2019
4. Study of multi-domain switching dynamics in negative capacitance FET using SPICE model;Gaidhane;Microelectron. J.,2021
5. Application of improved ACM model to the design by hand of CMOS analog circuits;de Jesus Costa;Microelectron. J.,2022
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