Funder
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. A new design technique for sub-nanosecond delay and 200 V/ns power supply slew-tolerant floating voltage level shifters for GaN SMPS;Liu;IEEE Trans. Circuits Syst. I, Reg. Papers,2019
2. A high-voltage half-bridge gate drive circuit for GaN devices with high-speed low-power and high-noise-immunity level shifter;Ming,2018
3. An up to 10MHz 6.8% minimum duty ratio GaN driver with dual-mos-switches bootstrap and adaptive short-pulse based high-CMTI level shifter achieving 6.05% efficiency improvement;Ming,2022
4. Study and implementation of 600-V high-voltage gate driver IC with the common-mode dual-interlock technique for GaN devices;Zhu;IEEE Trans. Ind. Electron.,2021
5. NCP51820 Datasheet: High Speed Half-Bridge Driver for GaN Power Switches,2020