Device parameter prediction for GAA junctionless nanowire FET using ANN approach-Reference-Cited by-同舟云学术

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Device parameter prediction for GAA junctionless nanowire FET using ANN approach

Published:2024-05 Issue: Volume:147 Page:106192
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Raj Abhishek^ORCID,Sharma Shashi Kant

Publisher

Elsevier BV

Reference38 articles.

1. A comparative study of advanced MOSFET concepts;Wann;IEEE Trans. Electron. Dev.,1996

2. Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors;Cabello;Appl. Phys. Lett.,2017

3. Electro-thermal characteristics of junctionless nanowire gate-all-around transistors using compact thermal conductivity model;Kumar;IEEE Trans. Electron. Dev.,2023

4. Impact of ambient temperature and thermal resistance on device performance of junctionless silicon-nanotube FET;Kumar;Nanotechnology,2022

5. Performance analysis of short channel effects immune JLFET with enhanced drive current;Raj;Int. J. Numer. Model. Electron. Network. Dev. Field.,2023

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on palladium gate electrode-based SOI junctionless FET for hydrogen gas sensing;Microelectronics Journal;2024-09

2. Characterizing parameter variations for enhanced performance and adaptability in 3 nm MBCFET technology;Microelectronics Journal;2024-09

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