Analysis of thermal stability in underlap and overlap DMG FinFETs including self-heating effects-Reference-Cited by-同舟云学术

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Analysis of thermal stability in underlap and overlap DMG FinFETs including self-heating effects

Published:2024-04 Issue: Volume:146 Page:106152
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Chaudhary Rashi,Saha Rajesh,Yadav Menka^ORCID

Publisher

Elsevier BV

Reference39 articles.

1. Effects of fin width on device performance and reliability of double-gate n-type FinFETs;Lin;IEEE Trans. Electron. Dev.,2013

2. Scaling of TG-FinFETs: 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes;Elthakeb;IEEE Trans. Electron. Dev.,2015

3. FinFETs: from devices to architecture;Bhattacharya,2014

4. Performance Analysis of Dual-Material Gate SOI MOSFET;Liu,2009

5. RF/Analog parameters in DMG-FinFET for channel material beyond Si;Saha,2022

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal analysis of GaN HEMTs using nongray multi-speed phonon lattice Boltzmann method under Joule heating effect;Microelectronics Journal;2024-09

2. Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors;physica status solidi (a);2024-07-03

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