Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference35 articles.
1. Recent developments in rare-earth doped materials for optoelectronics
2. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
3. Photoluminescence ofEr3+-implanted amorphous hydrogenated silicon suboxides
4. Modeling and perspectives of the Si nanocrystals–Er interaction for optical amplification
5. The visible and near IR photoluminescent response of nc-Si:Er thin films produced by rf sputtering
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1. Effect of nanocavities on Ge nanoclustering and out-diffusion in SiO2;Nanotechnology;2016-12-14
2. Structural and optical properties of Er3+ doped SiO2–Al2O3–GeO2 compounds prepared by a simple route;Materials Science and Engineering: B;2015-04
3. Near-infrared–ultraviolet absorption cross sections for Ge nanocrystals in SiO2 thin films: Effects of shape and layer structure;Journal of Applied Physics;2011-05
4. Influence of Amorphous Silica Matrices on the Formation, Structure, and Chemistry of Iron and Iron Oxide Nanoparticles;Journal of the American Chemical Society;2009-09-24
5. Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals;Applied Surface Science;2008-04
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