Author:
Kang Myounggon,Song Ki-Whan,Park Byung-Gook,Shin Hyungcheol
Reference7 articles.
1. A 512-mb DDR3 SDRAM prototype with C/sub IO/minimization and self-calibration techniques.;Park;2006 IEEE J. Solid-State Circuits,2006
2. Myounggon Kang, Ki-Whan Song, Hoeju Chung, Jinyoung Kim, Yeong-Taek Lee, Changhyun Kim, SCR-based ESD protection for high bandwidth DRAMs, in: Proceedings of the Asian Solid-State Circuits Conference (ASSCC), 2007, pp. 208–211, 12–14.
3. Ming-Dou Ker, Kuo-Chun Hsu, Complementary substrate-triggered SCR devices for on-chip ESD protection circuits, in: Proceedings of the ASIC/SOC, pp. 229–233, 2002.
4. Design of a latchup-free ESD power clamp for smart power ICs;Park;J. Semicond. Technol. Sci. (JSTS),2008
5. BER measurement of a 5.8-Gb/s/pin unidirectional differential I/O for DRAM application with DIMM channel;Jang;IEEE J. Solid-State Circuits,2009
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10 articles.
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