Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference16 articles.
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2. Oxide Trap-Induced RTS in MOSFETs;Noise in Nanoscale Semiconductor Devices;2020
3. Impact device processing and scaling on RTS;Random Telegraph Signals in Semiconductor Devices;2017
4. Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/fnoise measurements;Japanese Journal of Applied Physics;2014-01-01
5. Random telegraph noise in highly scaled nMOSFETs;2009 IEEE International Reliability Physics Symposium;2009
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