Modeling of electrostatics and drain current in nanoscale quadruple-gate MOSFET using conformal mapping techniques-Reference-Cited by-同舟云学术

Modeling of electrostatics and drain current in nanoscale quadruple-gate MOSFET using conformal mapping techniques

Published:2013-01 Issue:1 Volume:44 Page:3-6
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Monga Udit,Nilsen Dag-Martin,Fjeldly Tor A.

Publisher

Elsevier BV

Subject

General Engineering

Reference10 articles.

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2. FinFETs and Other Multi-Gate Transistors;Colinge,2008

3. Precise modeling framework for short channel double-gate and gate-all-around MOSFETs;Børli;IEEE Trans. Electron Devices,2008

4. H. Børli, Modeling of Drain Current and Intrinsic Capacitances in Nanoscale Double-Gate and Gate-All-Around MOSFETs, Ph.D. Thesis, Norwegian University of Science and Technology, 2008.

5. Scaling theory for double-gate SOI MOSFETs;Suzuki;IEEE Trans. Electron Devices,1993

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4. Conclusions and Future Scope;Analog Circuits and Signal Processing;2013-08-14