Bipolar transistor with quantum well base
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference8 articles.
1. Resonant tunneling transistor with quantum well base and high energy injection—a new negative differential resistance device;Capasso;J. Appl. Phys.,1985
2. Realization of a three terminal resonant tunneling device—the bipolar quantum resonant tunneling transistor;Reed;Appl. Phys. Lett.,1989
3. The bipolar inversion channel field effect transistor (BICFET)—a new field effect solid state device: theory and structure;Taylor;IEEE Trans. Electron. Dev.,1985
4. Low-temperature characterization of high-current-gain graded-emitter AlGaAs/GaAs narrow-base heterojunction bipolar transistor;Ikossi-Anastasiou;IEEE Electron. Dev. Lett.,1992
5. Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure;Tsai;Superlattices Microstruct.,1998
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1. The Effect of Quantum Well Base in GaAs-Based HBT;Lecture Notes in Electrical Engineering;2022-09-12
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