Retention characteristics of a nonvolatile latch utilizing a ferroelectric transistor-Reference-Cited by-同舟云学术

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Retention characteristics of a nonvolatile latch utilizing a ferroelectric transistor

Published:2019-02 Issue: Volume:84 Page:122-128
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Mitchell Cody^ORCID,Hunt Mitchell R.,Ho Fat D.

Publisher

Elsevier BV

Subject

General Engineering

Reference23 articles.

1. Implementation of low-power, non-volatile latch utilising ferroelectric transistor;Mitchell;Electron. Lett.,2015

2. Empirical data of the metal-ferroelectric-semiconductor field effect transistor polarization and channel resistance for timing and retention analysis;Hunt;Integr. Ferroelectr.,2014

3. Modeling Radiant Thin Ferroelectric Film Transistors;Evans,2011

4. Study on gradual reversal of polarization in ferroelectric PZT thin films for adaptive-learning MFSFET applications;Tanisake;Integr. Ferroelectr.,1995

5. Functionality of the ferroelectric/oxide semiconductor interface;Evans;Appl. Surf. Sci.,1997

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. IP2 optimization in frequency mixers using ferroelectric field-effect transistors;Applied Physics Letters;2024-08-05

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