Low-power current reference with temperature compensation by subthreshold leakage current-Reference-Cited by-同舟云学术

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Low-power current reference with temperature compensation by subthreshold leakage current

Published:2021-03 Issue: Volume:109 Page:104936
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Xu Zhentao^ORCID,Lin Zhi^ORCID

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

General Engineering

Reference7 articles.

1. A nano-ampere current reference circuit and its temperature dependence control by using temperature characteristics of carrier mobilities;Hirose,2010

2. A 23pW, 780ppm/°C resistor-less current reference using subthreshold MOSFETs;Choi,2014

3. A 1.4-μW 24.9-ppm/°C current reference with process-insensitive temperature compensation in 0.18-μm CMOS;Lee;IEEE J. Solid State Circ.,2012

4. 1 V CMOS current references for wide-temperature range applications;Calvo;Electron. Lett.,2013

5. Study and application of leakage currents in MOSFET under nanometer process to reference circuits;Xu;Nanosci. Nanotechnol. Lett.,2015

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 250pA, Gate-Leakage Based Trimming Free Current Reference, from −55°C to 150°C for Lower Power IoT Applications;2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS);2023-08-06

2. A 79 pW, 106 ppm/°C NMOS-only current reference with leakage current isolation based on body bias technique;AEU - International Journal of Electronics and Communications;2023-03

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