Technological and devices modeling of complementary JFETs over a wide temperature range-Reference-Cited by-同舟云学术

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Technological and devices modeling of complementary JFETs over a wide temperature range

Published:2020-11 Issue: Volume:105 Page:104911
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Drozdov D.G.^ORCID,Prokopenko N.N.^ORCID,Savchenko E.M.,Dukanov P.A.,Rodin V.G.,Grushin A.I.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

General Engineering

Reference25 articles.

1. Cryogenic operational amplifier on complementary JFETs;Dvornikov,2018

2. Design of low-temperature DDOAs on the elements of BIJFET array chip MH2XA030;Dvornikov;Serbian J. Electr. Eng.,2018

3. Fabrication and characterization of low-noise cryogenic Si JFETs;Goldberg,1995

4. Preamplifiers for room temperature and cryogenic calorimetry applications based on DMILL technology;Ardelean;Nucl. Instrum. Methods Phys. Res., Sect. A: Accel. Spectrom. Detect. Assoc. Equip., North-Holland,1996

5. Experimental study about JFET's behaviour at low temperatures;Iliescu;Rom. Rep. Phys.,2000

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Architectures and Circuitry of GaAs Operational Amplifiers for Instrumentation and Integrated Microelectronic Systems;2023 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF);2023-05-29

2. Low-temperature micropower CJFET OpAmp with reduced Vzero value;2021 29th Telecommunications Forum (TELFOR);2021-11-23

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