Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures-Reference-Cited by-同舟云学术

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Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures

Published:2004-10 Issue:10 Volume:35 Page:805-810
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Holzer Stefan,Minixhofer Rainer,Heitzinger Clemens,Fellner Johannes,Grasser Tibor,Selberherr Siegfried

Publisher

Elsevier BV

Subject

General Engineering

Reference19 articles.

1. A thick Polysilicon three-state fuse;Doyle;Motorola Technical Developments,1983

2. CMOS trimming circuit based on polysilicon fusing;Kim;Electronics Letters,1998

3. Element trimming fusible link;Nickel;IBM Technical Disclosure Bulletin,1984

4. Polysilicon Fuse;Lloyd;IBM Technical Disclosure Bulletin,1981

5. Programming mechanism of polysilicon resistor fuses;Greve;IEEE Transactions on Electronic Devices,1982

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recovering doping profiles in semiconductor devices with the Boltzmann–Poisson model;Journal of Computational Physics;2011-05

2. Estimation of thermal conductivity of sandwich bread using an inverse method;Journal of Food Engineering;2008-03

3. A Detailed Qualitative Model for the Programming Physics of Silicided Polysilicon Fuses;IEEE Transactions on Electron Devices;2007

4. Transient electro-thermal investigations of interconnect structures exposed to mechanical stress;SPIE Proceedings;2005-06-30

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