Plasma mediated ns-laser erosion of SiC monitored using Raman spectroscopy and in-operando LIBS

Author:

Karnam DileepORCID,Rouhani MehdiORCID,Hobley JonathanORCID,Hung Chia-Hung,Lo Yu-LungORCID,Metla Sai Bhavani SravanORCID,Jeng Yeau-Ren

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Reference48 articles.

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3. Spectral broadening induced by intense ultra-short pulse in 4H-SiC crystals;Xu;Chinese Phys. B,2016

4. Machining processes of silicon carbide: a review;Pawar;Rev.Adv. Mater. Sci.,2017

5. Machined quality prediction and optimization for micro-EDM drilling of semi-conductive SiC wafer;Cao;Mater. Sci. Semicond. Process.,2024

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