Effects of surface treatments for the adhesion improvement between Cu and SiCN in BEOL interconnect

Author:

Kim Dong Jun,Kang Sumin,Lee Sun Woo,Lee Inhwa,Park Seungju,Lee Jihyun,Kim Joong Jung,Kim Taek-SooORCID

Publisher

Elsevier BV

Reference34 articles.

1. Reliability of dual damascene TSV for high density integration: the electromigration issue;Moreau,2013

2. Effect of post-chemical–mechanical polishing surface treatments on the interfacial adhesion energy between Cu and a capping layer;Kim;Jpn. J. Appl. Phys.,2013

3. Optimization of via bottom cleaning for bumpless interconnects and wafer-on-wafer (WOW) integration;Kim,2018

4. Reliability challenges of through-silicon-via (TSV) stacked memory chips for 3-D integration: from transistors to packages;Son,2013

5. Pixel/DRAM/logic 3-layer Stacked CMOS image sensor technology;Tsugawa,2017

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