Nitrogen doped compound defect in black phosphorene for enhanced gas sensing-Reference-Cited by-同舟云学术

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Nitrogen doped compound defect in black phosphorene for enhanced gas sensing

Published:2024-08 Issue: Volume:51 Page:104699
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Talukdar Dhanjit^ORCID,Mohanta D.^ORCID,Ahmed Gazi A.^ORCID

Funder

Tezpur University

Publisher

Elsevier BV

Reference57 articles.

1. The rise of graphene;Geim;Nat. Mater.,2007

2. Phosphorene: an unexplored 2D semiconductor with a high hole mobility;Liu;ACS Nano,2014

3. Unique electron transport in ultrathin black phosphorene: Ab-initio study;Srivastava;Appl. Surf. Sci.,2015

4. Electronic and optical properties of low-dimensional group-IV monochalcogenides;Gomes;J. Appl. Phys.,2020

5. Electronic, optical, and adsorption properties of Li-doped hexagonal boron nitride: a GW approach;Talukdar;Phys. Chem. Chem. Phys.,2024

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