Laser synthesis of volatile memristors based on niobium oxide thin films-Reference-Cited by-同舟云学术

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Laser synthesis of volatile memristors based on niobium oxide thin films

Published:2022-06 Issue: Volume:30 Page:101891
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Novodvorsky Oleg,Parshina Liubov^ORCID,Khramova Olga,Gusev Dmitriy^ORCID,Polyakov Alexander^ORCID,Cherebilo Elena

Funder

Ministerstwo Edukacji i Nauki

Russian Foundation for Basic Research

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry

Reference33 articles.

1. Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications;Liu;IEEE Electr. Device. L.,2012

2. Room Temperature Fabricated NbOx/Nb2O5 Memory Switching Device with Threshold Switching Effect;Mähne,2013

3. A Scalable Neuristor Built with Mott Memristors;Pickett;Nat. Mater.,2013

4. Beyond Von-Neumann Computing with Nanoscale Phase-Change Memory Devices;Wright;Adv. Funct. Mater.,2012

5. Finding a Roadmap to Achieve Large Neuromorphic Hardware Systems;Hasler;Front. Neurosci.,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities;Nanomaterials;2024-02-19

2. A Review of Phase-Change Materials and Their Potential for Reconfigurable Intelligent Surfaces;Micromachines;2023-06-16

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