Valence subbands and optical gain in wurtzite and zinc-blende strained GaN/AlGaN quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
2. Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field‐effect transistors
3. Motion of Electrons and Holes in Perturbed Periodic Fields
4. Envelope-function formalism for valence bands in wurtzite quantum wells
5. First-principles calculations of effective-mass parameters of AlN and GaN
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2. Atomistic analysis of piezoelectric potential fluctuations in zinc-blende InGaN/GaN quantum wells: A Stillinger-Weber potential based analysis;Physical Review B;2021-04-19
3. High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100);ACS Photonics;2018-01-08
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