The electronic structure of CuGaSe2 and ZnGeAs2: Experimental and calculated K emission bands-Reference-Cited by-同舟云学术

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The electronic structure of CuGaSe2 and ZnGeAs2: Experimental and calculated K emission bands

Published:1997-08 Issue:5 Volume:103 Page:303-307
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Drahokoupil J.,Drbohlav I.,Harák J.,Polčík M.,Šimůnek A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference16 articles.

1. Photoemission studies ofCuInSe2andCuGaSe2and of their interfaces with Si and Ge

2. Proc. 12th Int. Conf. Phys. Semicond;Braun,1974

3. Electronic Density of States of Amorphous CuGaS2 and ZnGeAs2

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Element-specific gap in the p states for ternary semiconductors CuGaSe2and ZnGeAs2via alignment of x-ray emission and x-ray absorption spectra;Journal of Physics: Condensed Matter;2008-03-25

2. X-ray-absorption near-edge structure ofCuGaSe2and ZnSe: Experiment and theory;Physical Review B;1997-11-15

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