Exciton dynamics in homoepitaxial GaN

Author:

Monemar B.,Bergman J.P.,Ivanov I.G.,Baranowski J.M.,Pakula K.,Grzegory I.,Porowski S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference16 articles.

1. Proc. Int. Symp. on Blue Laser and Light Emitting Diodes;Monemar,1996

2. Proc. 8th Conf. on Semi-Insulating III–V Materials;Porowski,1994

3. Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

4. Proc. 23rd Int. Conf. Phys. Semicond.;Baranowski,1996

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1. Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders;Journal of Applied Physics;2004-07

2. Dynamics of excitonic recombination and interactions in homoepitaxial GaN;Physical Review B;2002-05-28

3. Exciton dynamics in homoepitaxial GaN in the picosecond regime;SPIE Proceedings;2001-04-23

4. Photoluminescence in GaN and InGaN and their applications in photonics;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

5. Chapter 3 Growth and optical properties of GaN;Processing and Properties of Compound Semiconductors;2001

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