Raman study of the optical phonons in AlxGa1−xN alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
1. Ultraviolet and violet light‐emitting GaN diodes grown by low‐pressure metalorganic chemical vapor deposition
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. Two‐dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates
5. Room‐temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy
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1. Effect of impurities on the Raman spectra of spray-coated β-Ga2O3 thin films;Journal of Vacuum Science & Technology A;2022-07
2. Effect of Al Addition on Crystal Structure of AlGaN/GaN on GaAs (001) Substrate Grown by Metalorganic Vapor Phase Epitaxy;Journal of Metals, Materials and Minerals;2022-03-29
3. Assesment of a model to calculate the refractive index of AlXGa1-XN epilayers using the multi-oscillator model simulation of the infrared reflectance;Physica B: Condensed Matter;2022-01
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5. Modification of the Surface Properties of AlxGa1–xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments;ACS Omega;2019-07-08
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