Photoluminescence and transport in selectively doped p-GaAs/AlGaAs quantum wells: manifestation of the upper Hubbard band
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Metallic behavior and related phenomena in two dimensions
2. Metal-insulator transition in two dimensions: Role of the upper Hubbard band
3. Magnetoresistance Related to on-Site Spin Correlations in the Hopping Conductivity
4. Two-dimensionalD−centers
5. Explanation of the formation ofD−ions in quantum wells
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1. Spin and charge effects due to positively charged acceptors in GaAs/AlGaAs quantum wells;Low Temperature Physics;2015-02
2. The manifestation of Coulomb gap in photoluminescence of GaAs/AlGaAs quantum wells with positively charged acceptors;Solid State Communications;2012-12
3. Circular polarization of the photoluminescence from a system of two-dimensional A + centers in a magnetic field;Semiconductors;2011-06
4. Mixed conduction in doped semiconductor structures related to quasi-metallic conduction in the impurity band;Semiconductors;2010-04
5. Optical studies of A+-centers in GaAs/AlGaAs quantum wells. Energy structure of the isolated centers, and their collective behavior;Physica B: Condensed Matter;2009-12
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