Overcoming absorption saturation with doping in p-type quantum well infrared photodetectors: modeling and experiment-Reference-Cited by-同舟云学术

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Overcoming absorption saturation with doping in p-type quantum well infrared photodetectors: modeling and experiment

Published:2003-10 Issue:5-6 Volume:44 Page:331-336
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Szmulowicz F.,Ehret J.,Mahalingam K.,Hegde S.,Solomon J.,Tomich D.H.,Landis G.,Brown G.J.,Oogarah T.,Liu H.C.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Calculation of resonant absorption and photoresponse measurement in p‐type GaAs/AlGaAs quantum wells

2. Long Wavelength Infrared Detectors;Brown,1996

3. Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors

4. Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors

5. Calculation and photoresponse measurement of the bound-to-continuum infrared absorption inp-type GaAs/AlxGa1−xAs quantum wells

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