Optical and photoelectrical properties of Hg1−xCdxTe/CdTe epitaxial films with graded band gap-Reference-Cited by-同舟云学术

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Optical and photoelectrical properties of Hg1−xCdxTe/CdTe epitaxial films with graded band gap

Published:2001-04 Issue:2 Volume:42 Page:61-67
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Ivasiv Z.F.,Tetyorkin V.V.,Sizov F.F.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Infrared image sensors

2. L.J. Kozlowski, W.F. Kosonocky, Infrared Detector Arrays, in: M. Boss, W. Van Stryland, D.R. Williams, W.L. Wolfe, (Eds.), Handbook of Optics, McGraw-Hill, New York, 1995

3. Advances in 15-um HgCdTe photovoltaic and photoconductive detector technology for remote sensing

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation and characterization of Hg1−Cd Te epilayers;Journal of Alloys and Compounds;2004-11

2. Some structural aspects of PbxCd1−xTe bulk material;The European Physical Journal Applied Physics;2004-07

3. Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength;Journal of Electronic Materials;2002-07

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