Molecular beam epitaxial growth of PbTe and PbSnTe on Si(100) substrates for heterojunction infrared detectors-Reference-Cited by-同舟云学术

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Molecular beam epitaxial growth of PbTe and PbSnTe on Si(100) substrates for heterojunction infrared detectors

Published:2001-04 Issue:2 Volume:42 Page:91-99
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Boschetti C.,Bandeira I.N.,Closs H.,Ueta A.Y.,Rappl P.H.O.,Motisuke P.,Abramof E.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Growth of narrow gap epilayers and p-n junctions on silicon for infrared detectors arrays

2. Intrinsic infrared detectors

3. Evolution Of A New Semiconductor Product: Mercury Cadmium Telluride Focal Plane Arrays

4. 160 × 244 Element PtSi Schottky-barrier IR-CCD image sensor

5. Photovoltaic lead-chalcogenide on silicon infrared sensor arrays

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1. Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio;Nanotechnology;2024-05-23

2. Production of Thin Pb_xSn_1–xTe Films by “Hot Wall” Method for Creating IR-Photodetectors;Science & Technique;2021-12-03

3. The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films;Journal of Physics: Conference Series;2021-11-01

4. Structural Characterization of Pb0.7Sn0.3Te Crystalline Topological Insulator Thin Films Grown on Si(111);Semiconductors;2021-08

5. Lattice-Mismatched PbTe/ZnTe Heterostructure with High-Speed Midinfrared Photoresponses;ACS Applied Materials & Interfaces;2019-09-25

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