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35 μm cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs

  • Published:2001-06 Issue:3-5 Volume:42 Page:157-162
  • ISSN:1350-4495
  • Container-title:Infrared Physics & Technology
  • language:en
  • Short-container-title:Infrared Physics & Technology

Author:

Perera A.G.U.,Matsik S.G.,Liu H.C.,Gao M.,Buchanan M.,Schaff W.J.,Yeo W.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in Infrared Photodetectors Since 2000;Sensors;2013-04-16

2. The theory and experiment of very-long-wavelength 256×1 GaAs/Al x Ga1−x As quantum well infrared detector linear arrays;Science in China Series G: Physics, Mechanics and Astronomy;2008-06-22

3. Predictions of the responsivity of terahertz quantum well infrared photodetectors;SPIE Proceedings;2003-07-02

4. QUANTUM STRUCTURES FOR FAR-INFRARED DETECTION;International Journal of High Speed Electronics and Systems;2002-09

5. GaInAs(P) based QWIPs on GaAs, InP, and Si substrates for focal plane arrays;Handbook of Infra-red Detection Technologies;2002
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