On the internal photoemission spectrum of PtSi/p-Si infrared detectors
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. 160 × 244 Element PtSi Schottky-barrier IR-CCD image sensor
2. A standard-television compatible 648*487 pixel Schottky-barrier infrared CCD image sensor
3. Current transport mechanisms studied by I-V-T and IR photoemission measurements on a P-doped PtSi Schottky diode
4. Bias and thickness dependence of the infra-red Schottky diode studied by internal photoemission
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2. Midwavelength interband cascade infrared photodetectors with superlattice absorbers and gain;Optical Engineering;2017-09-05
3. Optical characterization of the PtSi/Si by using spectroscopic ellipsometry;Journal of the Korean Physical Society;2016-08
4. Asymmetric MSM sub-bandgap all-silicon photodetector with low dark current;Optics Express;2013-11-08
5. Cavity Enhanced Internal Photoemission Effect in Silicon Photodiode for Sub-Bandgap Detection;Journal of Lightwave Technology;2010-11
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