Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission-Reference-Cited by-同舟云学术

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Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission

Published:2020-11 Issue: Volume:40 Page:101-113
ISSN:1369-7021
Container-title:Materials Today
language:en
Short-container-title:Materials Today

Author:

Meng Andrew C.,Braun Michael R.,Wang Yanming,Peng Siying,Tan Wanliang,Lentz J. Zach,Xue Muyu,Pakzad Anahita,Marshall Ann F.,Harris James S.,Cai Wei,McIntyre Paul C.

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference51 articles.

1. Germanium-Tin Alloys: Applications in Microelectronics and Photonics

2. Germanium-based integrated photonics from near- to mid-infrared applications

3. Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

4. Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research progress of out-of-plane GeSn nanowires;Nanotechnology;2024-03-26

2. Single crystal ferroelectric AlScN nanowires;CrystEngComm;2024

3. Short-wave infrared cavity resonances in a single GeSn nanowire;Nature Communications;2023-07-20

4. Self-organized Ge_1−xSn _x quantum dots formed on insulators and their room temperature photoluminescence;Japanese Journal of Applied Physics;2023-07-01

5. Progress in group-IV semiconductor nanowires based photonic devices;Applied Physics A;2023-02-25

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