Investigation of Etched Trenches in Technology of LEC Semi-Insulating GaAs Monolithic Linear Detector Array-Reference-Cited by-同舟云学术

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Investigation of Etched Trenches in Technology of LEC Semi-Insulating GaAs Monolithic Linear Detector Array

Published:2006-01 Issue: Volume:150 Page:194-199
ISSN:0920-5632
Container-title:Nuclear Physics B - Proceedings Supplements
language:en
Short-container-title:Nuclear Physics B - Proceedings Supplements

Author:

Perd'ochová A.,Dubecký F.,Nečas V.,Haščík Š.,Sekáčová M.,Huran J.

Publisher

Elsevier BV

Subject

Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Reference13 articles.

1. Room-temperature compound semiconductor radiation detectors

2. T. Ly Ann et al., Proceedings of the XIIth International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002). Smolenice Castle, Slovakia (2002) 292-295 (0-7803-7418-5)

3. Investigation of performance of semi-insulating GaAs detectors irradiated by high γ doses

4. Analysis of the active layer in SI GaAs Schottky diodes

5. Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etched trenches in technology of monolithic strip detectors based on semi-insulating GaAs;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-07

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