Semiconducting behavior and bandgap energies of oxide films grown on alloy 600 under PWR simulated primary water conditions with different dissolved hydrogen contents-Reference-Cited by-同舟云学术

Semiconducting behavior and bandgap energies of oxide films grown on alloy 600 under PWR simulated primary water conditions with different dissolved hydrogen contents

Published:2013-11 Issue:1-3 Volume:443 Page:222-229
ISSN:0022-3115
Container-title:Journal of Nuclear Materials
language:en
Short-container-title:Journal of Nuclear Materials

Author:

Loucif A.,Petit J.-P.,Wouters Y.

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics

Reference31 articles.

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